90%
t
(pff50-90)
Time
50%
0
GATE
V
EN
Time
50%
50%
ATE
VCC
t
(prr50-50)
0
TPS24710,TPS24711
TPS24712,TPS24713
SLVSAL2E JANUARY 2011REVISED NOVEMBER 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
40癈 d T
J
d 125癈, V
CC
= 12 V, V
EN
= 3 V, and R
PROG
= 50 k?to GND.
All voltages referenced to GND, unless otherwise noted.
PARAMETER
CONDITIONS
MIN NOM MAX UNIT
V
TIMER
= 2 V
8
10
12
礎
Sinking current
V
EN
= 0 V, V
TIMER
= 2 V
2
4.5
7
mA
Upper threshold voltage
1.30
1.35
1.40
V
Lower threshold voltage
0.33
0.35
0.37
V
Timer activation voltage
Raise GATE until I
TIMER
sinking, measure V
(GATE VCC)
, V
CC
= 12 V
5
5.9
7
V
Bleed-down resistance
V
ENSD
= 0 V, V
TIMER
= 2 V
70
104
130
k?/DIV>
OUT
Input bias current
V
OUT
= 12 V
16
30
礎
GATE
Output voltage
V
OUT
= 12 V
23.5
25.8
28
V
Clamp voltage
Inject 10 礎 into GATE, measure V
(GATE VCC)
12
13.9
15.5
V
Sourcing current
V
GATE
= 12 V
20
30
40
礎
Fast turnoff, V
GATE
= 14 V
0.5
1
1.4
A
Sinking current
Sustained, V
GATE
= 4 V to 23 V
6
11
20
mA
In inrush current limit, V
GATE
= 4 V to 23 V
20
30
40
礎
Pulldown resistance
Thermal shutdown
14
20
26
k?/DIV>
Fast-turnoff duration
8
13.5
18
祍
Turn on delay
V
CC
rising to GATE sourcing, t
prr50-50
, See Figure 2
100
250
祍
SENSE
Input bias current
V
SENSE
= 12 V, sinking current
30
40
礎
Current limit threshold
V
OUT
= 12 V
22.5
25
27.5
mV
V
OUT
= 7 V, R
PROG
= 50 k&
10
12.5
15
Power limit threshold
mV
V
OUT
= 2 V, R
PROG
= 25 k&
10
12.5
15
Fast-trip threshold
52
60
68
mV
Fast-turnoff duration
8
13.5
18
祍
Fast-turnoff delay
(2)
V
(VCC SENSE)
= 80 mV, C
GATE
= 0 pF, t
prf5050
, See Figure 3
200
ns
OTSD
Threshold, rising
130
140
癈
Hysteresis
(2)
10
癈
(2) Parameters are for reference only, and do not constitute part of TIs published specifications for purposes of TIs product warranty.
Figure 1. t
pff5090
Timing Definition
Figure 2. t
prr5050
Timing Definition
4
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